CAP TANT 47UF 20% 6V AXIAL
MOSFET N-CH 100V 80A D2PAK
类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tube |
零件状态: | Discontinued at Digi-Key |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 15mOhm @ 45A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 120 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3830 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 260W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSS87E6327TIR (Infineon Technologies) |
MOSFET N-CH 240V 260MA SOT89-4 |
|
AON6266Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 13A/30A 8DFN |
|
ZVN4310ASTOBZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 900MA E-LINE |
|
IRFR812PBFIR (Infineon Technologies) |
MOSFET N-CH 500V 3.6A DPAK |
|
FQB13N10TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12.8A D2PAK |
|
STS19N3LLH6STMicroelectronics |
MOSFET N-CH 30V 19A 8SO |
|
IRF1405ZTRLVishay / Siliconix |
MOSFET N-CH 55V 75A TO220AB |
|
IRF7459TRIR (Infineon Technologies) |
MOSFET N-CH 20V 12A 8SO |
|
IRF7809PBFIR (Infineon Technologies) |
MOSFET N-CH 28V 14.5A 8SO |
|
TSM13N50ACZ C0GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 500V 13A TO220 |
|
IRF6712STR1PBFIR (Infineon Technologies) |
MOSFET N-CH 25V 17A DIRECTFET |
|
IRFIZ24GVishay / Siliconix |
MOSFET N-CH 60V 14A TO220-3 |
|
AOTF8T50P_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 8A TO220F |