CAP CER 3900PF 500V X7R 0805
CAP CER 1600PF 250V C0G/NP0 RAD
MOSFET P-CH 60V 3.44A 8DSO
SPIDER 5TX PD EEC
类型 | 描述 |
---|---|
系列: | SIPMOS® |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 3.44A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 130mOhm @ 3.44A, 10V |
vgs(th) (最大值) @ id: | 4V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 30 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 875 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-DSO-8 |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
STS9P2UH7STMicroelectronics |
MOSFET P-CH 20V 9A 8SO |
![]() |
IRF9393PBFIR (Infineon Technologies) |
MOSFET P-CH 30V 9.2A 8SO |
![]() |
SI4411DY-T1-E3Vishay / Siliconix |
MOSFET P-CH 30V 9A 8SO |
![]() |
SPI20N60CFDHKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 20.7A TO262-3 |
![]() |
IRF7421D1PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 5.8A 8SO |
![]() |
TK4P50D(T6RSS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 4A DPAK |
![]() |
IRF1302SIR (Infineon Technologies) |
MOSFET N-CH 20V 174A D2PAK |
![]() |
RSS130N03FU6TBROHM Semiconductor |
MOSFET N-CH 30V 13A 8SOP |
![]() |
IXFN100N25Wickmann / Littelfuse |
MOSFET N-CH 250V 100A SOT-227B |
![]() |
FDMC7672_F125Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 16.9A/20A 8MLP |
![]() |
VS-FB180SA10PVishay General Semiconductor – Diodes Division |
MOSFET N-CH 100V 180A SOT-227 |
![]() |
DMN5L06T-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 50V 280MA SOT-523 |
![]() |
SSM3K15FS,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100MA SSM |