English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 48A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 20mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±15V |
| 输入电容 (ciss) (max) @ vds: | 2210 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 103W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRLL1905TRVishay / Siliconix |
MOSFET N-CH 55V 1.6A SOT223 |
|
IPD50R520CPIR (Infineon Technologies) |
MOSFET N-CH 550V 7.1A TO252-3 |
|
IPD30N06S2L-13IR (Infineon Technologies) |
MOSFET N-CH 55V 30A TO252-3 |
|
APT130SM70JMicrosemi |
SICFET N-CH 700V 78A SOT227 |
|
IRF1104STRLIR (Infineon Technologies) |
MOSFET N-CH 40V 100A D2PAK |
|
FQA28N50_F109Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 28.4A TO3P |
|
IPU075N03L GIR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO251-3 |
|
IRF3707PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 62A TO220AB |
|
AON6424Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 11A/41A 8DFN |
|
AO4448Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 80V 10A 8SOIC |
|
NP160N04TUG-E1-AYRenesas Electronics America |
MOSFET N-CH 40V 160A TO263-7 |
|
IPP65R190CFDAAKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 17.5A TO220-3 |
|
AO4701Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 5A 8SOIC |
