English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Cut Tape (CT)Tape & Box (TB) |
| 零件状态: | Discontinued at Digi-Key |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 300mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V, 10V |
| rds on (max) @ id, vgs: | 5Ohm @ 100mA, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 0.4 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 7.32 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 400mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-92 |
| 包/箱: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TPC8031-H(TE12LQM)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 11A 8SOP |
|
SPI15N65C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 15A TO262-3 |
|
SI4682DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 16A 8SO |
|
IRF7201IR (Infineon Technologies) |
MOSFET N-CH 30V 7.3A 8SO |
|
BFL4001-1ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 4.1A TO220-3 FP |
|
BUK7210-55B/C1,118NXP Semiconductors |
MOSFET N-CH 55V 75A DPAK |
|
IRLU7833PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 140A I-PAK |
|
IRLZ44Vishay / Siliconix |
MOSFET N-CH 60V 50A TO220AB |
|
VS-FC80NA20Vishay General Semiconductor – Diodes Division |
MOSFET N-CH 200V 108A SOT227 |
|
PMN49EN,165NXP Semiconductors |
MOSFET N-CH 30V 4.6A 6TSOP |
|
STP5NK65ZSTMicroelectronics |
MOSFET N-CH 650V 5A TO220 |
|
IPP50R350CPHKSA1IR (Infineon Technologies) |
MOSFET N-CH 500V 10A TO220-3 |
|
IRLR014NTRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 10A DPAK |
