English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Ta), 95A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 4.2mOhm @ 50A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 50µA |
| 栅极电荷 (qg) (max) @ vgs: | 28 nC @ 5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3660 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.8W (Ta), 62.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TDSON-8-5 |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPD053N06N3GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-3 |
|
FQP22P10Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 22A TO220-3 |
|
NVMFS6B03NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 20A 5DFN |
|
IXFX26N60QWickmann / Littelfuse |
MOSFET N-CH 600V 26A PLUS247-3 |
|
IRF830STRLVishay / Siliconix |
MOSFET N-CH 500V 4.5A D2PAK |
|
IRFPS29N60LPBFVishay / Siliconix |
MOSFET N-CH 600V 29A SUPER247 |
|
IRFS7787PBF-IRRochester Electronics |
MOSFET N-CH 75V 76A TO263-3-2 |
|
AON6400LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 8DFN |
|
AON4407L_002Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 12V 9A 8DFN |
|
AON7422E_101Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 20A/40A 8DFN |
|
AOD4158Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 17A TO252 |
|
IRFR5410PBFIR (Infineon Technologies) |
MOSFET P-CH 100V 13A DPAK |
|
IPI052NE7N3 GIR (Infineon Technologies) |
MOSFET N-CH 75V 80A TO262-3 |
