English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.3A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 60mOhm @ 5.3A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 25 nC @ 10 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 860 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFR3709ZIR (Infineon Technologies) |
MOSFET N-CH 30V 86A DPAK |
|
IRLR3410TRRIR (Infineon Technologies) |
MOSFET N-CH 100V 17A DPAK |
|
64-2096PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 160A D2PAK |
|
APT20M22B2VRGMicrosemi |
MOSFET N-CH 200V 100A T-MAX |
|
BSL802SNH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 20V 7.5A TSOP-6 |
|
IXFH9N80Wickmann / Littelfuse |
MOSFET N-CH 800V 9A TO247AD |
|
APT5012JNMicrosemi |
MOSFET N-CH 500V 43A ISOTOP |
|
SI3495DV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 5.3A 6TSOP |
|
IRL3714LIR (Infineon Technologies) |
MOSFET N-CH 20V 36A TO262 |
|
FQP630TSTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 9A TO220-3 |
|
IRFR024Vishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
IPI80N06S4L07AKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 80A TO262-3 |
|
SSM5H12TU(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 1.9A UFV |
