类型 | 描述 |
---|---|
系列: | HiPerFET™ |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 500 V |
电流 - 连续漏极 (id) @ 25°c: | 48A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 100mOhm @ 500mA, 10V |
vgs(th) (最大值) @ id: | 4V @ 8mA |
栅极电荷 (qg) (max) @ vgs: | 270 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 8400 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 520W (Tc) |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Chassis Mount |
供应商设备包: | SOT-227B |
包/箱: | SOT-227-4, miniBLOC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPB80N06S3L-05IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO263-3 |
|
IRLR3714ZTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 37A DPAK |
|
IRF2805SPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 135A D2PAK |
|
ZXMP2120E5TAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 200V 122MA SOT25 |
|
IRFR320TRRVishay / Siliconix |
MOSFET N-CH 400V 3.1A DPAK |
|
IRF830ALVishay / Siliconix |
MOSFET N-CH 500V 5A I2PAK |
|
SI7440DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK SO-8 |
|
IPD200N15N3GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 50A TO252-3 |
|
STP20NF06STMicroelectronics |
MOSFET N-CH 60V 20A TO220AB |
|
IXFP8N50PMWickmann / Littelfuse |
MOSFET N-CH 500V 4.4A TO220AB |
|
STF25NM60NDSTMicroelectronics |
MOSFET N-CH 600V 21A TO220FP |
|
IPD50R650CEATMA1IR (Infineon Technologies) |
MOSFET N-CH 500V 6.1A TO252-3 |
|
IRF3710ZSTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 59A D2PAK |