类型 | 描述 |
---|---|
系列: | SDMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 3.3A (Ta), 8A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 7V, 10V |
rds on (max) @ id, vgs: | 145mOhm @ 3A, 10V |
vgs(th) (最大值) @ id: | 3.3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 5.3 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 285 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 3.1W (Ta), 16.7W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-DFN (3x3) |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FQU3N60CTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 2.4A IPAK |
|
APTC90DAM60T1GMicrosemi |
MOSFET N-CH 900V 59A SP1 |
|
IRFR210BTM_FP001Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 2.7A DPAK |
|
DMN3031LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 9A 8SOP |
|
EPC2015EPC |
GANFET N-CH 40V 33A DIE OUTLINE |
|
IPB25N06S3-25IR (Infineon Technologies) |
MOSFET N-CH 55V 25A TO263-3 |
|
NTGS3455T1Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 2.5A 6TSOP |
|
MGSF1N02LT1Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 750MA SOT23-3 |
|
IPD105N03LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 35A TO252-3 |
|
SI1013X-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 350MA SC89-3 |
|
IRL3303STRRIR (Infineon Technologies) |
MOSFET N-CH 30V 38A D2PAK |
|
BUK755R4-100E,127Nexperia |
MOSFET N-CH 100V 120A TO220AB |
|
BSP324 E6327IR (Infineon Technologies) |
MOSFET N-CH 400V 170MA SOT223-4 |