CAP CER 1000PF 200V C0G/NP0 1812
DIODE SCHOTTKY 8A 45V SMPC
MOSFET P-CH 12V 9.9A PPAK 1212-8
类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 12 V |
电流 - 连续漏极 (id) @ 25°c: | 9.9A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
rds on (max) @ id, vgs: | 12mOhm @ 15.6A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 400µA |
栅极电荷 (qg) (max) @ vgs: | 59 nC @ 4.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | 1.5W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® 1212-8 |
包/箱: | PowerPAK® 1212-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IXFN40N110Q3Wickmann / Littelfuse |
MOSFET N-CH 1100V 35A SOT-227B |
|
PHT4NQ10T,135Nexperia |
MOSFET N-CH 100V 3.5A SOT223 |
|
IRLR3714TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 36A DPAK |
|
IRF9540STRLVishay / Siliconix |
MOSFET P-CH 100V 19A D2PAK |
|
FQD2N80TM_WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 1.8A DPAK |
|
2SK1859-ERenesas Electronics America |
MOSFET N-CH 900V 6A TO3P |
|
AUIRFS3107IR (Infineon Technologies) |
MOSFET N-CH 75V 195A D2PAK |
|
BTS110E3045ANTMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 10A TO220AB |
|
IRFSL3207IR (Infineon Technologies) |
MOSFET N-CH 75V 180A TO262 |
|
STP6NK50ZSTMicroelectronics |
MOSFET N-CH 500V 5.6A TO220AB |
|
IRFZ44VSTRLIR (Infineon Technologies) |
MOSFET N-CH 60V 55A D2PAK |
|
SPP47N10IR (Infineon Technologies) |
MOSFET N-CH 100V 47A TO220-3 |
|
IXTQ182N055TWickmann / Littelfuse |
MOSFET N-CH 55V 182A TO3P |