类型 | 描述 |
---|---|
系列: | UltraFET™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 51A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 26mOhm @ 51A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 86 nC @ 10 V |
vgs (最大值): | ±16V |
输入电容 (ciss) (max) @ vds: | 2400 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 180W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D²PAK (TO-263AB) |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FQP47P06_SW82049Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 47A TO220-3 |
|
IRF6643TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 6.2A DIRECTFET |
|
IXTA90N055TWickmann / Littelfuse |
MOSFET N-CH 55V 90A TO263 |
|
STI11NM60NDSTMicroelectronics |
MOSFET N-CH 600V 10A I2PAK |
|
BSP149 E6327IR (Infineon Technologies) |
MOSFET N-CH 200V 660MA SOT223-4 |
|
IRF5305LIR (Infineon Technologies) |
MOSFET P-CH 55V 31A TO262 |
|
SPW17N80C3AIR (Infineon Technologies) |
MOSFET N-CH 800V 17A TO247-3 |
|
IRF610SVishay / Siliconix |
MOSFET N-CH 200V 3.3A D2PAK |
|
TK4A55DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 550V 3.5A TO220SIS |
|
IRL620Vishay / Siliconix |
MOSFET N-CH 200V 5.2A TO220AB |
|
IXTV250N075TSWickmann / Littelfuse |
MOSFET N-CH 75V 250A PLUS-220SMD |
|
BSP129E6327TIR (Infineon Technologies) |
MOSFET N-CH 240V 350MA SOT223-4 |
|
IRFR210TRRVishay / Siliconix |
MOSFET N-CH 200V 2.6A DPAK |