DGTL ISO 2500VRMS 1CH GP 8MSOP
MOSFET N-CH 55V 75A TO220AB
类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 55 V |
电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 7.5mOhm @ 75A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 95 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2840 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 140W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRLR014NTRRIR (Infineon Technologies) |
MOSFET N-CH 55V 10A DPAK |
|
APT5014SLLG/TRMicrosemi |
MOSFET N-CH 500V 35A TO247 |
|
SPP12N50C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 560V 11.6A TO220-3 |
|
IRF6607IR (Infineon Technologies) |
MOSFET N-CH 30V 27A DIRECTFET |
|
IPP08CNE8N GIR (Infineon Technologies) |
MOSFET N-CH 85V 95A TO220-3 |
|
NDT452PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 3A SOT-223-4 |
|
TP2424N8-GRoving Networks / Microchip Technology |
MOSFET P-CH 240V 316MA TO243AA |
|
IRL640Vishay / Siliconix |
MOSFET N-CH 200V 17A TO220AB |
|
FDD45AN06LA0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 5.2A/25A TO252AA |
|
NTP30N20GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 30A TO220AB |
|
NTP6413ANGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 42A TO220AB |
|
SI4493DY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 10A 8SO |
|
SI6466ADQ-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 6.8A 8TSSOP |