English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | POWER MOS 8™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 16A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 430mOhm @ 7A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 500µA |
| 栅极电荷 (qg) (max) @ vgs: | 72 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 2882 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 290W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247 [B] |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFI630GVishay / Siliconix |
MOSFET N-CH 200V 5.9A TO220-3 |
|
ZXMN6A08E6TCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 2.8A SOT26 |
|
SIR408DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 50A PPAK SO-8 |
|
BUK98150-55A,135NXP Semiconductors |
MOSFET N-CH 55V 5.5A SOT-223 |
|
AO3481Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 4A SOT23-3 |
|
IRFR220NCPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 5A DPAK |
|
IXTY3N60PWickmann / Littelfuse |
MOSFET N-CH 600V 3A TO252 |
|
RJK2555DPA-WS#J0Renesas Electronics America |
MOSFET N-CH 250V 17A 8WPAK |
|
APT20M38BVFRGMicrosemi |
MOSFET N-CH 200V 67A TO247 |
|
NTB85N03T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 28V 85A D2PAK |
|
IRFR014Vishay / Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
|
AON6542Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 23A/30A 8DFN |
|
IRFZ24SVishay / Siliconix |
MOSFET N-CH 60V 17A D2PAK |
