English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 8.5mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 18 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.47W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTD15N06T4Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 15A DPAK |
|
IRFHM4231TRPBFIR (Infineon Technologies) |
MOSFET N-CH 25V 40A 8PQFN |
|
IRF3707ZSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 59A D2PAK |
|
2SK2962,T6F(MToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH TO92MOD |
|
TPC6109-H(TE85L,FMToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 5A VS-6 |
|
IRFR5305TRRPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 31A DPAK |
|
IXFN24N100FWickmann / Littelfuse |
MOSFET N-CH 1000V 24A SOT227B |
|
IRF7467TRIR (Infineon Technologies) |
MOSFET N-CH 30V 11A 8SO |
|
FQP3N80Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 3A TO220-3 |
|
RJK0629DPE-00#J3Renesas Electronics America |
MOSFET N-CH 60V 85A 4LDPAK |
|
AO4435_102Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 10.5A 8SO |
|
PH1730AL,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
IRF5803TRIR (Infineon Technologies) |
MOSFET P-CH 40V 3.4A MICRO6 |
