English
简体中文
TAG BRASS RND 1.5 OXY 351-375
MOSFET N-CH 30V 8DFN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | 85A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-DFN (5x6) |
| 包/箱: | 8-PowerSMD, Flat Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NVMFS5830NLWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 29A 5DFN |
|
FQD7N30TFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 300V 5.5A DPAK |
|
IRFSL4610IR (Infineon Technologies) |
MOSFET N-CH 100V 73A TO262 |
|
RJK0851DPB-00#J5Renesas Electronics America |
MOSFET N-CH 80V 20A LFPAK |
|
SI4398DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 19A 8SO |
|
BSB053N03LP GIR (Infineon Technologies) |
MOSFET N-CH 30V 17A/71A 2WDSON |
|
STH110N7F6-2STMicroelectronics |
MOSFET N-CH 68V 80A H2PAK-2 |
|
FDD4243-F085PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 14A TO252 |
|
BUK7905-40ATE,127Nexperia |
MOSFET N-CH 40V 75A TO220-5 |
|
IRF7433IR (Infineon Technologies) |
MOSFET P-CH 12V 8.9A 8SO |
|
2N7002WT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 310MA SC70-3 |
|
SUD50N03-16P-GE3Vishay / Siliconix |
MOSFET N-CH 30V TO252 |
|
ZVP3310FTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 100V 75MA SOT23-3 |