English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 36A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 20mOhm @ 18A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 9.7 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 670 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 47W (Tc) |
| 工作温度: | - |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFZ30PBFVishay / Siliconix |
MOSFET N-CH 50V 30A TO220AB |
|
IXTY12N06TWickmann / Littelfuse |
MOSFET N-CH 60V 12A TO252 |
|
SUP53P06-20-GE3Vishay / Siliconix |
MOSFET P-CH 60V 9.2A/53A TO220AB |
|
IRL3402PBFIR (Infineon Technologies) |
MOSFET N-CH 20V 85A TO220AB |
|
AOL1208Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 11A/50A ULTRASO8 |
|
IPP04CN10NGIR (Infineon Technologies) |
MOSFET N-CH 100V 100A TO220-3 |
|
SUP40P10-43-GE3Vishay / Siliconix |
MOSFET P-CH 100V 36A TO220AB |
|
IRF6708S2TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 13A DIRECTFET S1 |
|
ZVNL120CSTOAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 200V 180MA E-LINE |
|
IRLR024TRRVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
IXFA14N60P3Wickmann / Littelfuse |
MOSFET N-CH 600V 14A TO263 |
|
IRFR3704ZTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 60A DPAK |
|
FQD12N20LTFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 9A DPAK |
