English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | STripFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 38A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 2.15mOhm @ 19A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 33 nC @ 4.5 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 6060 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 5.2W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PolarPak® |
| 包/箱: | PolarPak® |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRLZ24Vishay / Siliconix |
MOSFET N-CH 60V 17A TO220AB |
|
STP5N120STMicroelectronics |
MOSFET N-CH 1200V 4.7A TO220-3 |
|
SPP11N65C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO220-3 |
|
SI7392DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 9A PPAK SO-8 |
|
IXFQ26N50Wickmann / Littelfuse |
MOSFET N-CH 500V 26A TO3P |
|
IPP80N06S3L-06IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO220-3 |
|
NVMFS5C426NWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 5DFN |
|
STB50NF25STMicroelectronics |
MOSFET N-CH 250V 45A D2PAK |
|
AOTF12N65AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 12A TO220F |
|
IRF2204LPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 170A TO262 |
|
IPD60R1K4C6IR (Infineon Technologies) |
MOSFET N-CH 600V 3.2A TO252-3 |
|
STW18NK80ZSTMicroelectronics |
MOSFET N-CH 800V 19A TO247-3 |
|
RJK1557DPA-00#J0Renesas Electronics America |
MOSFET N-CH 150V 25A 8WPAK |
