English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 30A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 235mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | 92 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 4100 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 60W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-3PFM |
| 包/箱: | TO-3PFM, SC-93-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STP200NF04LSTMicroelectronics |
MOSFET N-CH 40V 120A TO220AB |
|
NVMFS6B75NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 7A/28A 5DFN |
|
FQB12N50TM_AM002Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 12.1A D2PAK |
|
FQPF12N60CTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 12A TO220F |
|
SPP07N65C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7.3A TO220-3 |
|
STI175N4F6AGSTMicroelectronics |
MOSFET N-CH 40V 120A I2PAK |
|
IRF3711ZSPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 92A D2PAK |
|
NVMFS5C430NLWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 200A 5DFN |
|
IPB80N06S205ATMA1IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO263-3 |
|
RJK0305DPB-WS#J0Renesas Electronics America |
MOSFET N-CH 30V 30A 5LFPAK |
|
IRF7702IR (Infineon Technologies) |
MOSFET P-CH 12V 8A 8TSSOP |
|
STB12NM50NDSTMicroelectronics |
MOSFET N-CH 500V 11A D2PAK |
|
BSP89L6327HTSA1IR (Infineon Technologies) |
MOSFET N-CH 240V 350MA SOT223-4 |
