English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 105A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 12.5mOhm @ 75A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 8mA |
| 栅极电荷 (qg) (max) @ vgs: | 360 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 9100 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 400W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | ISOPLUS247™ |
| 包/箱: | ISOPLUS247™ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFR3711PBFIR (Infineon Technologies) |
MOSFET N-CH 20V 100A DPAK |
|
IPU60R1K0CEAKMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 4.3A TO251-3 |
|
TK12P60W,RVQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 11.5A DPAK |
|
MCH6342-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 4.5A 6MCPH |
|
2SK3128(Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 60A TO3P |
|
IRFIBC30GVishay / Siliconix |
MOSFET N-CH 600V 2.5A TO220-3 |
|
FQD9N25TFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 7.4A DPAK |
|
IRFS4010-7PPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 190A D2PAK |
|
IRFR5410TRLIR (Infineon Technologies) |
MOSFET P-CH 100V 13A DPAK |
|
SUP60N06-12P-E3Vishay / Siliconix |
MOSFET N-CH 60V 60A TO220AB |
|
IRF620SVishay / Siliconix |
MOSFET N-CH 200V 5.2A D2PAK |
|
PHB174NQ04LT,118NXP Semiconductors |
MOSFET N-CH 40V 75A D2PAK |
|
IRFR15N20DTRLPIR (Infineon Technologies) |
MOSFET N-CH 200V 17A DPAK |
