English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 55mOhm @ 4A, 4.5V |
| vgs(th) (最大值) @ id: | 1.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 6 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 640 pF @ 6 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 900mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFS41N15DPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 41A D2PAK |
|
SUD50N025-06P-E3Vishay / Siliconix |
MOSFET N-CH 25V 78A TO252 |
|
IPS10N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 30A TO251-3 |
|
STW55NM60NSTMicroelectronics |
MOSFET N-CH 600V 51A TO247-3 |
|
ZVN3306ASTOAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 270MA E-LINE |
|
FQB13N10LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12.8A D2PAK |
|
IXFR13N50Wickmann / Littelfuse |
MOSFET N-CH 500V 13A ISOPLUS247 |
|
SI4892DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 8.8A 8SO |
|
AO3460LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 650MA SOT23 |
|
IRF7459TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 12A 8SO |
|
SI7446BDP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK SO-8 |
|
IRF540STRLVishay / Siliconix |
MOSFET N-CH 100V 28A D2PAK |
|
NVMFS5C468NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 5DFN |
