English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 12 V |
| 电流 - 连续漏极 (id) @ 25°c: | 870mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 165mOhm @ 870mA, 4.5V |
| vgs(th) (最大值) @ id: | 450mV @ 250µA (Min) |
| 栅极电荷 (qg) (max) @ vgs: | 6 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 170mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SC-89-6 |
| 包/箱: | SOT-563, SOT-666 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF7353D1PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 6.5A 8SO |
|
IRF7807VD2IR (Infineon Technologies) |
MOSFET N-CH 30V 8.3A 8SO |
|
IRF9520NLPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 6.8A TO262 |
|
APT33N90JCCU2Microsemi |
MOSFET N-CH 900V 33A SOT227 |
|
FQB17P06TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 17A D2PAK |
|
IRF5805TRIR (Infineon Technologies) |
MOSFET P-CH 30V 3.8A MICRO6 |
|
AON6424AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 11A/41A 8DFN |
|
NVD5802NT4G-TB01Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 16.4A/101A DPAK |
|
BUZ73A H3046IR (Infineon Technologies) |
MOSFET N-CH 200V 5.5A TO220-3 |
|
IRFSL9N60ATRLVishay / Siliconix |
MOSFET N-CH 600V 9.2A I2PAK |
|
STW25NM50NSTMicroelectronics |
MOSFET N-CH 500V 22A TO247-3 |
|
NTMFS4C13NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7.2A/38A 5DFN |
|
STL20NM20NSTMicroelectronics |
MOSFET N-CH 200V 20A POWERFLAT |
