English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 32A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 20V |
| rds on (max) @ id, vgs: | 100mOhm @ 20A, 20V |
| vgs(th) (最大值) @ id: | 3V @ 1mA (Typ) |
| 栅极电荷 (qg) (max) @ vgs: | 130 nC @ 20 V |
| vgs (最大值): | +25V, -10V |
| 输入电容 (ciss) (max) @ vds: | 2560 pF @ 1000 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 165W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Chassis Mount |
| 供应商设备包: | SOT-227 |
| 包/箱: | SOT-227-4, miniBLOC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF530NSTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 17A D2PAK |
|
SK8603190LPanasonic |
MOSFET N-CH 30V 12A/19A 8HSO |
|
FDB075N15A_SN00284Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 130A D2PAK |
|
IRF1010ZSIR (Infineon Technologies) |
MOSFET N-CH 55V 75A D2PAK |
|
ZXMP3F36N8TAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 7.2A 8SO |
|
SPD07N20IR (Infineon Technologies) |
MOSFET N-CH 200V 7A TO252-3 |
|
STH130N10F3-2STMicroelectronics |
MOSFET N-CH 100V 120A H2PAK-2 |
|
IRL3402IR (Infineon Technologies) |
MOSFET N-CH 20V 85A TO220AB |
|
IXTY50N085TWickmann / Littelfuse |
MOSFET N-CH 85V 50A TO252 |
|
IPL65R725CFDAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 5.8A THIN-PAK |
|
IRL530STRRVishay / Siliconix |
MOSFET N-CH 100V 15A D2PAK |
|
IRF9540Vishay / Siliconix |
MOSFET P-CH 100V 19A TO220AB |
|
SUM110N03-03P-E3Vishay / Siliconix |
MOSFET N-CH 30V 110A TO263 |
