类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Discontinued at Digi-Key |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 6 V |
电流 - 连续漏极 (id) @ 25°c: | 2A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
rds on (max) @ id, vgs: | 84mOhm @ 100mA, 4.5V |
vgs(th) (最大值) @ id: | 1.2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | 6V |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | 270mW (Ta) |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SC-70-6 |
包/箱: | 6-TSSOP, SC-88, SOT-363 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
SPP80N06S2L-07IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO220-3 |
![]() |
STB30NM50NSTMicroelectronics |
MOSFET N-CH 500V 27A D2PAK |
![]() |
NVTFS4824NWFTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 18.2A 8WDFN |
![]() |
IRLR7811WCPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 64A DPAK |
![]() |
IRFSL31N20DIR (Infineon Technologies) |
MOSFET N-CH 200V 31A TO262 |
![]() |
IXTH60N10Wickmann / Littelfuse |
MOSFET N-CH 100V 60A TO247 |
![]() |
FQPF6N90CTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 6A TO220F |
![]() |
SIS456DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 35A PPAK 1212-8 |
![]() |
SUD50N10-34P-T4-E3Vishay / Siliconix |
MOSFET N-CH 100V 5.9A/20A TO252 |
![]() |
IPI072N10N3GXKIR (Infineon Technologies) |
MOSFET N-CH 100V 80A TO262-3 |
![]() |
FDC2512_F095Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 1.4A SUPERSOT6 |
![]() |
2SK3047Panasonic |
MOSFET N-CH 800V 2A TO220D-A1 |
![]() |
SIB404DK-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 9A PPAK SC75-6 |