English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Discontinued at Digi-Key |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 90A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 2.4mOhm @ 90A, 10V |
| vgs(th) (最大值) @ id: | 3.9V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 134 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4610 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 140W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SPB100N06S2L-05IR (Infineon Technologies) |
MOSFET N-CH 55V 100A TO263-3 |
|
RSS120N03TBROHM Semiconductor |
MOSFET N-CH 30V 12A 8SOP |
|
IRF7470TRIR (Infineon Technologies) |
MOSFET N-CH 40V 10A 8SO |
|
IPB80N06S2L07ATMA1IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO263-3 |
|
IRFSL4410IR (Infineon Technologies) |
MOSFET N-CH 100V 96A TO262 |
|
IRFSL31N20DTRLVishay / Siliconix |
MOSFET N-CH 200V 31A I2PAK |
|
IRLR7833TRIR (Infineon Technologies) |
MOSFET N-CH 30V 140A DPAK |
|
FQI12N50TUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 12.1A I2PAK |
|
BSC072N025S GIR (Infineon Technologies) |
MOSFET N-CH 25V 15A/40A TDSON |
|
IRFZ48VPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 72A TO220AB |
|
AO4454Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 6.5A 8SOIC |
|
BUK7C08-55AITE,118Nexperia |
MOSFET N-CH 55V 75A D2PAK |
|
ZVNL120CSTOBZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 200V 180MA E-LINE |
