English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 55A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 8.5mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 32 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1476 pF @ 12.5 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 51.5W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252, (D-Pak) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQP7N40Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 7A TO220-3 |
|
IRFU3504PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 30A IPAK |
|
IRF630STRRVishay / Siliconix |
MOSFET N-CH 200V 9A D2PAK |
|
PHK18NQ03LT,518Nexperia |
MOSFET N-CH 30V 20.3A 8SO |
|
SIS778DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 35A PPAK1212-8 |
|
FDD107AN06LA0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 3.4A/10.9A TO252 |
|
IRF7807VD1PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 8.3A 8SO |
|
64-0007IR (Infineon Technologies) |
MOSFET N-CH 200V 18A TO220AB |
|
IRFUC20Vishay / Siliconix |
MOSFET N-CH 600V 2A TO251AA |
|
IPI057N08N3 GIR (Infineon Technologies) |
MOSFET N-CH 80V 80A TO262-3 |
|
TPC8035-H(TE12L,QMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 18A 8SOP |
|
AO3401AL_101Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 4.3A SOT23-3 |
|
STP20NM65NSTMicroelectronics |
MOSFET N-CH 650V 15A TO220 |
