类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 400 V |
电流 - 连续漏极 (id) @ 25°c: | 3.1A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.8Ohm @ 1.9A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 350 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta), 42W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D-Pak |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NDF10N62ZGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 620V 10A TO220FP |
|
2SK3431-Z-E1-AZRenesas Electronics America |
MOSFET N-CH 40V 83A TO220AB |
|
2SJ656Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 18A TO220ML |
|
IRF7455PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 15A 8SO |
|
IRF644NSPBFVishay / Siliconix |
MOSFET N-CH 250V 14A D2PAK |
|
IPL65R420E6AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10.1A THIN-PAK |
|
NVTFS5811NLWFTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 16A 8WDFN |
|
TK50E06K3(S1SS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 50A TO220-3 |
|
BTS121AE3045ANTMA1IR (Infineon Technologies) |
MOSFET N CH 100V 22A TO-220AB |
|
IXTT88N15Wickmann / Littelfuse |
MOSFET N-CH 150V 88A TO268 |
|
NTMFS4847NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11.5A/85A 5DFN |
|
IPI80N04S3H4AKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO262-3 |
|
IRFIB5N50LPBFVishay / Siliconix |
MOSFET N-CH 500V 4.7A TO220-3 |