English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 30mOhm @ 7A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 13 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 516 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI5456DU-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 12A CHIPFET |
|
NP82N055PUG-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 82A TO263 |
|
IRF9610Vishay / Siliconix |
MOSFET P-CH 200V 1.8A TO220AB |
|
IRFZ44EIR (Infineon Technologies) |
MOSFET N-CH 60V 48A TO220AB |
|
PHM18NQ15T,518NXP Semiconductors |
MOSFET N-CH 150V 19A 8HVSON |
|
PMR290UNE,115NXP Semiconductors |
MOSFET N-CH 20V 700MA SC75 |
|
IPP26CNE8N GIR (Infineon Technologies) |
MOSFET N-CH 85V 35A TO220-3 |
|
BSL211SPL6327HTSA1IR (Infineon Technologies) |
MOSFET P-CH 20V 4.7A TSOP-6 |
|
ZXMN2A03E6TCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 3.7A SOT23-6 |
|
STF150N10F7STMicroelectronics |
MOSFET N-CH 100V 65A TO220FP |
|
2SK3868(Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 5A TO220SIS |
|
IRFR9210TRRVishay / Siliconix |
MOSFET P-CH 200V 1.9A DPAK |
|
IRL520STRLVishay / Siliconix |
MOSFET N-CH 100V 9.2A D2PAK |
