类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 4.3mOhm @ 80A, 10V |
vgs(th) (最大值) @ id: | 2.1V @ 475µA |
栅极电荷 (qg) (max) @ vgs: | 200 nC @ 10 V |
vgs (最大值): | +5V, -16V |
输入电容 (ciss) (max) @ vds: | 9300 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 200W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO262-3 |
包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRLL2703IR (Infineon Technologies) |
MOSFET N-CH 30V 3.9A SOT223 |
|
IRL3715ZLIR (Infineon Technologies) |
MOSFET N-CH 20V 50A TO262 |
|
IRFR3910TRLIR (Infineon Technologies) |
MOSFET N-CH 100V 16A DPAK |
|
SI3475DV-T1-E3Vishay / Siliconix |
MOSFET P-CH 200V 950MA 6TSOP |
|
IXFE23N100Wickmann / Littelfuse |
MOSFET N-CH 1000V 21A SOT227B |
|
STH52N10LF3-2AGSTMicroelectronics |
MOSFET N-CH 100V 52A H2PAK-2 |
|
EPC2018EPC |
GANFET N-CH 150V 12A DIE |
|
NTB18N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 15A D2PAK |
|
MTP2P50EGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 500V 2A TO220AB |
|
IXFQ10N80PWickmann / Littelfuse |
MOSFET N-CH 800V 10A TO3P |
|
NDT451NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 5.5A SOT-223-4 |
|
AO3401ALAlpha and Omega Semiconductor, Inc. |
MOSFET P-CHANNEL 30V 4A SOT23-3 |
|
GA50JT12-263GeneSiC Semiconductor |
TRANSISTOR 1200V 100A TO263-7 |