English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SIPMOS® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 47A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 26mOhm @ 33A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 2mA |
| 栅极电荷 (qg) (max) @ vgs: | 135 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2500 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 175W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO262-3-1 |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRL1004IR (Infineon Technologies) |
MOSFET N-CH 40V 130A TO220AB |
|
IRFR13N20DTRRIR (Infineon Technologies) |
MOSFET N-CH 200V 13A DPAK |
|
BVSS138LT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 200MA SOT-23-3 |
|
BSF077N06NT3GXUMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 13A/56A 2WDSON |
|
SI7886ADP-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 15A PPAK SO-8 |
|
IXFC24N50Wickmann / Littelfuse |
MOSFET N-CH 500V 21A ISOPLUS220 |
|
IRFS17N20DIR (Infineon Technologies) |
MOSFET N-CH 200V 16A D2PAK |
|
NP88N03KDG-E1-AYRenesas Electronics America |
MOSFET N-CH 30V 88A TO263 |
|
IRFSL41N15DIR (Infineon Technologies) |
MOSFET N-CH 150V 41A TO262 |
|
FDB8132Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 80A D2PAK |
|
STD11NM60N-1STMicroelectronics |
MOSFET N-CH 600V 10A I-PAK |
|
FDS7066N7Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 23A 8SO |
|
IXFX55N50FWickmann / Littelfuse |
MOSFET N-CH 500V 55A PLUS247-3 |
