English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | STripFET™ II |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 70mOhm @ 2A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 41 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 870 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXFC10N80PWickmann / Littelfuse |
MOSFET N-CH 800V 5A ISOPLUS220 |
|
IRFP23N50LVishay / Siliconix |
MOSFET N-CH 500V 23A TO247-3 |
|
SSM3K106TU(TE85L)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 1.2A UFM |
|
IRF6893MTRPBFIR (Infineon Technologies) |
MOSFET N-CH 25V 29A DIRECTFET |
|
SIR412DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 20A PPAK SO-8 |
|
IRF7706TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 7A 8TSSOP |
|
BSP149 E6906IR (Infineon Technologies) |
MOSFET N-CH 200V 660MA SOT223-4 |
|
RJK0603DPN-A0#T2Renesas Electronics America |
MOSFET N-CH 60V 80A TO220ABA |
|
PSMN005-55P,127NXP Semiconductors |
MOSFET N-CH 55V 75A TO220AB |
|
SI1300BDL-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 400MA SC70-3 |
|
FDD16AN08A0-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V 9A/50A TO252AA |
|
AOB2618LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 7A/23A TO263 |
|
STB8NM60NSTMicroelectronics |
MOSFET N-CH 600V 7A D2PAK |
