类型 | 描述 |
---|---|
系列: | HiPerFET™, Polar3™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 500 V |
电流 - 连续漏极 (id) @ 25°c: | 5A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.65Ohm @ 2.5A, 10V |
vgs(th) (最大值) @ id: | 5V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 6.9 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 370 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 114W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-252 |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDR838PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 8A SUPERSOT8 |
|
NVMFS5C426NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 5DFN |
|
UPA2738GR-E2-AXRenesas Electronics America |
MOSFET P-CH 30V 10A 8SOP |
|
SI3853DV-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 1.6A 6TSOP |
|
IPD135N08N3GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 45A TO252-3 |
|
IPP040N06N3GHKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO220-3 |
|
SPP07N60CFDHKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 6.6A TO220-3 |
|
IRF9Z30Vishay / Siliconix |
MOSFET P-CH 50V 18A TO220AB |
|
PH5525L,115NXP Semiconductors |
MOSFET N-CH 25V 81.7A LFPAK56 |
|
SI3451DV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 2.8A 6TSOP |
|
IPD400N06NGBTMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 27A TO252-3 |
|
APT20F50SMicrosemi |
MOSFET N-CH 500V 20A D3PAK |
|
BUK9575-55A,127Nexperia |
MOSFET N-CH 55V 20A TO220AB |