类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 75A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 5V |
rds on (max) @ id, vgs: | 11mOhm @ 37.5A, 5V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 92 nC @ 5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 4370 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 2.4W (Ta), 214W (Tj) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AOL1206Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 16A/54A ULTRASO8 |
|
IXFK21N100FWickmann / Littelfuse |
MOSFET N-CH 1000V 21A TO264 |
|
AOD4158PAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 13A/46A TO252 |
|
IRF7779L2TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 375A DIRECTFET |
|
IRF7807TRIR (Infineon Technologies) |
MOSFET N-CH 30V 8.3A 8SO |
|
NDS9407_GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 3A 8SOIC |
|
HUFA75321D3SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 55V 20A TO252AA |
|
RJK0852DPB-00#J5Renesas Electronics America |
MOSFET N-CH 80V 30A LFPAK |
|
SI4829DY-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 2A 8SO |
|
IPD25CN10NGBUMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 35A TO252-3 |
|
SISA18DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 38.3A PPAK1212-8 |
|
2SK2866(F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 10A TO220AB |
|
NTF3055L175T3LFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 2A SOT223 |