English
简体中文
MOSFET N-CH 75V 45.8A LFPAK56
20PC 6CC UNASSEMBLED MANUAL TAPE
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 75 V |
| 电流 - 连续漏极 (id) @ 25°c: | 45.8A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 16.5mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 33.4 nC @ 5 V |
| vgs (最大值): | ±15V |
| 输入电容 (ciss) (max) @ vds: | 2600 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 62.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | LFPAK56, Power-SO8 |
| 包/箱: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PH3430AL,115NXP Semiconductors |
MOSFET N-CH 30V 100A LFPAK56 |
|
IRLZ44NSTRRIR (Infineon Technologies) |
MOSFET N-CH 55V 47A D2PAK |
|
IPB03N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 80A TO263-3 |
|
IRLR9343TRLPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 20A DPAK |
|
RJK5012DPP-E0#T2Renesas Electronics America |
MOSFET N-CH 500V 12A TO220FP |
|
SI4418DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 200V 2.3A 8SO |
|
IRFR3504ZTRIR (Infineon Technologies) |
MOSFET N-CH 40V 42A DPAK |
|
SSM5N16FUTE85LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 100MA USV |
|
IRL6342PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 9.9A 8SO |
|
SI7402DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 13A PPAK 1212-8 |
|
NTP5411NGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 80A TO220AB |
|
FQA11N90CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 11A TO3P |
|
NTB18N06T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 15A D2PAK |