类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tube |
零件状态: | Discontinued at Digi-Key |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 5.2mOhm @ 55A, 10V |
vgs(th) (最大值) @ id: | 2V @ 110µA |
栅极电荷 (qg) (max) @ vgs: | 89.7 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3320 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 167W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO262-3-1 |
包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTHS5441PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.9A CHIPFET |
|
IRF7324D1PBFIR (Infineon Technologies) |
MOSFET P-CH 20V 2.2A 8SO |
|
IRLU3705ZIR (Infineon Technologies) |
MOSFET N-CH 55V 42A I-PAK |
|
IPI80N08S207AKSA1IR (Infineon Technologies) |
MOSFET N-CH 75V 80A TO262-3 |
|
UPA2813T1L-E1-ATRenesas Electronics America |
MOSFET P-CH 30V 27A 8HVSON |
|
AOB11N60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO263 |
|
RSS105N03TBROHM Semiconductor |
MOSFET N-CH 30V 10.5A 8SOP |
|
IPP03N03LAIR (Infineon Technologies) |
MOSFET N-CH 25V 80A TO220-3 |
|
FDB7030L_L86ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 80A TO263AB |
|
SIHB22N60S-GE3Vishay / Siliconix |
MOSFET N-CH 600V 22A D2PAK |
|
SI8415DB-T1-E1Vishay / Siliconix |
MOSFET P-CH 12V 5.3A 4MICROFOOT |
|
IXTH120N15TWickmann / Littelfuse |
MOSFET N-CH 150V 120A TO247 |
|
AUIRLL024ZIR (Infineon Technologies) |
MOSFET N-CH 55V 5A SOT223 |