MOSFET N-CH 600V 6.2A I2PAK
M25X1.5 CORD GRIP PVDF/TPE
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 6.2A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.2Ohm @ 3.7A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 39 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1100 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 125W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | I2PAK |
包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
APT30M85BVFRGMicrosemi |
MOSFET N-CH 300V 40A TO247 |
|
STD12NF06LT4STMicroelectronics |
MOSFET N-CH 60V 12A DPAK |
|
HAT2099H-EL-ERenesas Electronics America |
MOSFET N-CH 30V 50A LFPAK |
|
NTD4302Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8.4A/68A DPAK |
|
NTMFS4927NCT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7.9A/38A 5DFN |
|
IRLI620GPBFVishay / Siliconix |
MOSFET N-CH 200V 4A TO220-3 |
|
BSS306NL6327HTSA1IR (Infineon Technologies) |
MOSFET N-CH 30V 2.3A SOT23-3 |
|
IPB65R065C7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 7.3A D2PAK |
|
AOD514_050Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 17A/46A TO252 |
|
IRFR13N15DTRLIR (Infineon Technologies) |
MOSFET N-CH 150V 14A DPAK |
|
AOW410Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V TO262 |
|
NTD18N06LT4Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 18A DPAK |
|
BSS123TCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 170MA SOT23-3 |