English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 180A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 4mOhm @ 90A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 79 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5090 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 210W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AO4419LAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 9.7A 8SO |
|
NVMFS6B85NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 5.6A/19A 5DFN |
|
IRF7811ATRIR (Infineon Technologies) |
MOSFET N-CH 28V 11A 8SO |
|
BSS192PE6327TIR (Infineon Technologies) |
MOSFET P-CH 250V 190MA SOT89 |
|
SI6433BDQ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 4A 8TSSOP |
|
SIA419DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 12A PPAK SC70-6 |
|
IRF6668TR1IR (Infineon Technologies) |
MOSFET N-CH 80V 55A DIRECTFET MZ |
|
IPI045N10N3GXKIR (Infineon Technologies) |
MOSFET N-CH 100V 137A TO262-3 |
|
SI5433BDC-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 4.8A 1206-8 |
|
RK3055ETLROHM Semiconductor |
MOSFET N-CH 60V 8A CPT3 |
|
IRLR8503TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 44A DPAK |
|
PHP21N06LT,127NXP Semiconductors |
MOSFET N-CH 55V 19A TO220AB |
|
IPD60R385CPBTMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 9A TO252-3 |
