English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 62A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 13.5mOhm @ 37A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 87 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3180 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 140W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AON6780Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 30A/85A 8DFN |
|
RDN100N20ROHM Semiconductor |
MOSFET N-CH 200V 10A TO220FN |
|
FQD13N06LTFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 11A DPAK |
|
AOT11C60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 600V 11A TO220 |
|
FQI9N08LTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 9.3A I2PAK |
|
SIS612EDNT-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 50A PPAK1212-8S |
|
FDMA905P_F130Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 12V 10A 6MICROFET |
|
BUK7107-40ATC,118Nexperia |
MOSFET N-CH 40V 75A SOT426 |
|
IRF7524D1PBFIR (Infineon Technologies) |
MOSFET P-CH 20V 1.7A MICRO8 |
|
IRF7534D1IR (Infineon Technologies) |
MOSFET P-CH 20V 4.3A MICRO8 |
|
FQB5N50TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 4.5A D2PAK |
|
AON6538Alpha and Omega Semiconductor, Inc. |
MOSFET N CH 30V 30A 8DFN |
|
2SK2504TLROHM Semiconductor |
MOSFET N-CH 100V 5A CPT3 |
