SENSOR CURRENT MAGNETIC 10A DC
MOSFET N-CH 600V 30A TO247AD
类型 | 描述 |
---|---|
系列: | CoolMOS™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 125mOhm @ 16A, 10V |
vgs(th) (最大值) @ id: | 3.5V @ 1.1mA |
栅极电荷 (qg) (max) @ vgs: | 70 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2500 pF @ 10 V |
场效应管特征: | Super Junction |
功耗(最大值): | - |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247AD (IXKH) |
包/箱: | TO-3P-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI7802DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 250V 1.24A PPAK |
|
SIR878ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 40A PPAK SO-8 |
|
IRL3302LVishay / Siliconix |
MOSFET N-CH 20V 39A TO262-3 |
|
SPD50N03S207GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO252-3 |
|
FDC5612_F095Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 4.3A SUPERSOT6 |
|
IPP80N04S204AKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO220-3 |
|
NTD14N03R-001Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 2.5A IPAK |
|
AO4264Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 12A 8SO |
|
IRL3714STRRIR (Infineon Technologies) |
MOSFET N-CH 20V 36A D2PAK |
|
HUFA76439S3STSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 75A D2PAK |
|
IRFR1N60ATRRVishay / Siliconix |
MOSFET N-CH 600V 1.4A DPAK |
|
ZXMN3A01FTCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 1.8A SOT23-3 |
|
IRF3709ZSIR (Infineon Technologies) |
MOSFET N-CH 30V 87A D2PAK |