类型 | 描述 |
---|---|
系列: | CoolMOS™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 200mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 3.5V @ 1.1mA |
栅极电荷 (qg) (max) @ vgs: | 45 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1520 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247AD (IXKH) |
包/箱: | TO-3P-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI7621DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 4A PPAK1212-8 |
|
IXFR26N50QWickmann / Littelfuse |
MOSFET N-CH 500V 24A ISOPLUS247 |
|
STL100NH3LLSTMicroelectronics |
MOSFET N-CH 30V 100A POWERFLAT |
|
STP30NM60NSTMicroelectronics |
MOSFET N-CH 600V 25A TO220AB |
|
SIA811DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 4.5A PPAK SC70-6 |
|
IRF3707ZCLPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 59A TO262 |
|
IXFP8N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 8A TO220AB |
|
IRFU214BTU_FP001Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 2.2A IPAK |
|
IRLL014Vishay / Siliconix |
MOSFET N-CH 60V 2.7A SOT223 |
|
IRF7484TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 14A 8SO |
|
IRFR9014NTRVishay / Siliconix |
MOSFET P-CH 60V 5.1A DPAK |
|
IXFX30N110PWickmann / Littelfuse |
MOSFET N-CH 1100V 30A PLUS247-3 |
|
STD5N20T4STMicroelectronics |
MOSFET N-CH 200V 5A DPAK |