English
简体中文
MOSFET N-CH 900V 5.7A TO220-3
KIT XMTR QUICK DISC 30M
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 900 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.7A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1Ohm @ 3.3A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 370µA |
| 栅极电荷 (qg) (max) @ vgs: | 34 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 850 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 89W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220-3-1 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF6655TR1IR (Infineon Technologies) |
MOSFET N-CH 100V 4.2A DIRECTFET |
|
IRF5803D2PBFIR (Infineon Technologies) |
MOSFET P-CH 40V 3.4A 8SO |
|
2SJ377(TE16R1,NQ)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 5A PW-MOLD |
|
IRFBC30ASTRLVishay / Siliconix |
MOSFET N-CH 600V 3.6A D2PAK |
|
SI4880DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 13A 8-SOIC |
|
IRFBF20Vishay / Siliconix |
MOSFET N-CH 900V 1.7A TO220AB |
|
IRF3704ZPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 67A TO220AB |
|
IRFZ48RVishay / Siliconix |
MOSFET N-CH 60V 50A TO220AB |
|
GA100JT12-227GeneSiC Semiconductor |
TRANS SJT 1200V 160A SOT227 |
|
IRLR3715ZPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 49A DPAK |
|
SI7388DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK SO-8 |
|
NVMFS6B03NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 20A 5DFN |
|
IXFK150N15PWickmann / Littelfuse |
MOSFET N-CH 150V 150A TO264AA |