English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 15A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V, 20V |
| rds on (max) @ id, vgs: | 7mOhm @ 15A, 20V |
| vgs(th) (最大值) @ id: | 3.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 61 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 3500 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SOIC |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTD5807NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 23A DPAK |
|
IRFU5305IR (Infineon Technologies) |
MOSFET P-CH 55V 31A IPAK |
|
SPD30N03S2L-20IR (Infineon Technologies) |
MOSFET N-CH 30V 30A TO252-3 |
|
SPB80N06S08ATMA1IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO263-3 |
|
RJK0703DPP-E0#T2Renesas Electronics America |
MOSFET N-CH 75V 70A TO220FP |
|
IRF9540LVishay / Siliconix |
MOSFET P-CH 100V 19A I2PAK |
|
FQAF33N10LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 25.8A TO3PF |
|
FDD10AN06A0-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 11A TO252AA |
|
IXTH88N15Wickmann / Littelfuse |
MOSFET N-CH 150V 88A TO247 |
|
IPD600N25N3GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 250V 25A TO252-3 |
|
SI4346DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 5.9A 8SO |
|
NTF3055L108T3LFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 3A SOT223 |
|
IRL3715TRRIR (Infineon Technologies) |
MOSFET N-CH 20V 54A TO220AB |
