English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 300 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.6A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 400mOhm @ 960mA, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 33 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 730 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFP22N50AVishay / Siliconix |
MOSFET N-CH 500V 22A TO247-3 |
|
IXTH220N055TWickmann / Littelfuse |
MOSFET N-CH 55V 220A TO247 |
|
HAT2164H-EL-ERenesas Electronics America |
MOSFET N-CH 30V 60A LFPAK |
|
NP60N04MUG-S18-AYRenesas Electronics America |
MOSFET N-CH 40V 60A TO220 |
|
NVMFS6B03NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 132A 5DFN |
|
IRF6610TR1IR (Infineon Technologies) |
MOSFET N-CH 20V 15A DIRECTFET |
|
IRF1607IR (Infineon Technologies) |
MOSFET N-CH 75V 142A TO220AB |
|
STP4NB80STMicroelectronics |
MOSFET N-CH 800V 4A TO220AB |
|
HUFA75345S3SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 55V 75A D2PAK |
|
HAT2267H-EL-ERenesas Electronics America |
MOSFET N-CH 80V 25A LFPAK |
|
AOT210LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 20A/105A TO220 |
|
TSM10N60CZ C0TSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 10A TO220 |
|
IXFK100N25Wickmann / Littelfuse |
MOSFET N-CH 250V 100A TO264AA |
