English
简体中文
MOSFET 2N-CH 40V 10A 8SOIC
MOSFET N-CH 55V 75A TO220AB
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 7mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 45 nC @ 5 V |
| vgs (最大值): | ±15V |
| 输入电容 (ciss) (max) @ vds: | 3960 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 200W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STB230NH03LSTMicroelectronics |
MOSFET N-CH 30V 80A D2PAK |
|
BSC037N025S GIR (Infineon Technologies) |
MOSFET N-CH 25V 21A/100A TDSON |
|
IRFS33N15DIR (Infineon Technologies) |
MOSFET N-CH 150V 33A D2PAK |
|
BSS223PW L6327IR (Infineon Technologies) |
MOSFET P-CH 20V 390MA SOT323-3 |
|
IRF540STRRVishay / Siliconix |
MOSFET N-CH 100V 28A D2PAK |
|
SFP9640Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 11A TO220-3 |
|
IPB075N04LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 50A D2PAK |
|
IRFIZ46NPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 33A TO220AB FP |
|
STP270N4F3STMicroelectronics |
MOSFET N-CH 40V 120A TO220-3 |
|
SIR646DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
IRF7460TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 12A 8SO |
|
FQB4P40TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 400V 3.5A D2PAK |
|
ZXMP10A18KZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 100V 3.8A TO252-3 |