English
简体中文
MOSFET N-CH 900V 10A TO247AD
RJI CORD 4XAWG22/7ETHERRAIL 1XIP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 900 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.1Ohm @ 5A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 155 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4200 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247AD (IXFH) |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDS7288N3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 20A 8SO |
|
IRL3102STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 61A D2PAK |
|
IRF640FPSTMicroelectronics |
MOSFET N-CH 200V 18A TO220FP |
|
IPP50R199CPHKSA1IR (Infineon Technologies) |
MOSFET N-CH 550V 17A TO220-3 |
|
RJK1003DPN-A0#T2Renesas Electronics America |
MOSFET N-CH 100V 50A TO220ABA |
|
NTTFS4840NTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 4.6A/26A 8WDFN |
|
IRFZ34STRRVishay / Siliconix |
MOSFET N-CH 60V 30A D2PAK |
|
FDS7079ZN3Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 16A 8SO |
|
STU8NM60NDSTMicroelectronics |
MOSFET N-CH 600V 7A IPAK |
|
PHP32N06LT,127NXP Semiconductors |
MOSFET N-CH 60V 34A TO220AB |
|
AO4710L_101Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 12.7A 8SOIC |
|
IRF1310NSTRRIR (Infineon Technologies) |
MOSFET N-CH 100V 42A D2PAK |
|
IRL1404ZLIR (Infineon Technologies) |
MOSFET N-CH 40V 75A TO262 |