English
简体中文
CAP CER 0.022UF 100V X7R 0805
MOSFET P-CH 40V 38A LFPAK56
RESISTOR CHASSIS MOUNT 5.62K OHM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 38A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 25mOhm @ 7.9A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 50 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1591 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 66W (Ta) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | LFPAK56, Power-SO8 |
| 包/箱: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STP105N3LLSTMicroelectronics |
MOSFET N-CH 30V 80A TO220 |
|
BSB012N03LX3 GIR (Infineon Technologies) |
MOSFET N-CH 30V 39A/180A 2WDSON |
|
IRF6626IR (Infineon Technologies) |
MOSFET N-CH 30V 16A DIRECTFET |
|
IRF9Z24STRRVishay / Siliconix |
MOSFET P-CH 60V 11A D2PAK |
|
STP8NM60DSTMicroelectronics |
MOSFET N-CH 600V 8A TO220AB |
|
AON7400B_101Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 18A/40A 8DFN |
|
IRF6631TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 13A DIRECTFET |
|
NTD12N10GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12A DPAK |
|
NTBV25P06T4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 27.5A D2PAK |
|
FQD4P40TFSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 400V 2.7A DPAK |
|
IXFT17N80QWickmann / Littelfuse |
MOSFET N-CH 800V 17A TO268 |
|
STP30NM50NSTMicroelectronics |
MOSFET N-CH 500V 27A TO220-3 |
|
IRF5210LIR (Infineon Technologies) |
MOSFET P-CH 100V 40A TO262 |