English
简体中文
MOSFET N-CH 30V 61A DPAK
DIODE ZENER 5.1V 500MW DO35
30A, 60V, 0.065OHM, P-CHANNEL,
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Discontinued at Digi-Key |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 61A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.8V, 10V |
| rds on (max) @ id, vgs: | 12.5mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 24 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 2417 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 87W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APT5518BFLLGMicrosemi |
MOSFET N-CH 550V 31A TO247-3 |
|
DMP2066LVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.5A TSOT26 |
|
IPI120N06S402AKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO262-3 |
|
SI3458DV-T1-E3Vishay / Siliconix |
MOSFET N-CH 60V 3.2A 6TSOP |
|
SI5499DC-T1-GE3Vishay / Siliconix |
MOSFET P-CH 8V 6A 1206-8 CHIPFET |
|
RJK0603DPN-E0#T2Renesas Electronics America |
MOSFET N-CH 60V 80A TO220AB |
|
IPB60R520CPATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 6.8A D2PAK |
|
SIE726DF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 60A 10POLARPAK |
|
BSP149L6327HTSA1IR (Infineon Technologies) |
MOSFET N-CH 200V 660MA SOT223-4 |
|
APT5010JFLLRoving Networks / Microchip Technology |
MOSFET N-CH 500V 41A ISOTOP |
|
NTP75N06GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 75A TO220AB |
|
IRF6641TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 200V 4.6A DIRECTFET |
|
BSP320S E6433IR (Infineon Technologies) |
MOSFET N-CH 60V 2.9A SOT223-4 |