English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 110A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 6mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 44 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2980 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.1W (Ta), 120W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRL2203NSTRRIR (Infineon Technologies) |
MOSFET N-CH 30V 116A D2PAK |
|
BSP125 E6327IR (Infineon Technologies) |
MOSFET N-CH 600V 120MA SOT223-4 |
|
IXFN60N60Wickmann / Littelfuse |
MOSFET N-CH 600V 60A SOT-227B |
|
SUM23N15-73-E3Vishay / Siliconix |
MOSFET N-CH 150V 23A TO263 |
|
FQAF47P06Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 38A TO3PF |
|
IRF3314STRRIR (Infineon Technologies) |
MOSFET N-CH 150V D2PAK |
|
AOWF240Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 21A/83A |
|
AUIRF7484QIR (Infineon Technologies) |
MOSFET N CH 40V 14A 8-SO |
|
IRF7220TRPBFIR (Infineon Technologies) |
MOSFET P-CH 14V 11A 8SO |
|
NTGS4111PT2GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 2.6A 6TSOP |
|
IRF2807ZSIR (Infineon Technologies) |
MOSFET N-CH 75V 75A D2PAK |
|
STD90NS3LLH7STMicroelectronics |
MOSFET N-CHANNEL 30V 80A DPAK |
|
AOTF10N60_003Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 10A TO220-3F |
