English
简体中文
MOSFET N-CH 300V 54A TO247
SIGNAL CONDITIONING
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 300 V |
| 电流 - 连续漏极 (id) @ 25°c: | 54A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247 (IXTH) |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MCH6320-TL-ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 12V 3.5A 6MCPH |
|
BSL207SPIR (Infineon Technologies) |
MOSFET P-CH 20V 6A TSOP-6 |
|
2N7000RLRPGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 200MA TO92-3 |
|
SI4840DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 10A 8SO |
|
2SK1119(F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 1000V 4A TO220AB |
|
IRFDC20Vishay / Siliconix |
MOSFET N-CH 600V 320MA 4DIP |
|
SI5475DDC-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 6A 1206-8 |
|
AON7246Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 10A/34.5A 8DFN |
|
IRFR9024NTRLIR (Infineon Technologies) |
MOSFET P-CH 55V 11A DPAK |
|
STP5N95K3STMicroelectronics |
MOSFET N-CH 950V 4A TO220 |
|
IPS05N03LB GIR (Infineon Technologies) |
MOSFET N-CH 30V 90A TO251-3 |
|
IXFH14N80Wickmann / Littelfuse |
MOSFET N-CH 800V 14A TO247AD |
|
VMO1600-02PWickmann / Littelfuse |
MOSFET N-CH 200V 1900A Y3-LI |