English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SIPMOS® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9.7A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 250mOhm @ 6.8A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 21 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 450 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 42W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | P-TO251-3-1 |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
GA10JT12-247GeneSiC Semiconductor |
TRANS SJT 1200V 10A TO247AB |
|
STP6N120K3STMicroelectronics |
MOSFET N-CH 1200V 6A TO220 |
|
BUZ10STMicroelectronics |
MOSFET N-CH 50V 23A TO220AB |
|
IRLBL1304IR (Infineon Technologies) |
MOSFET N-CH 40V 185A SUPER D2PAK |
|
APT23F60SMicrosemi |
MOSFET N-CH 600V 24A D3PAK |
|
AOTF262LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 17.5A/85A TO220 |
|
AUIRF2804L-313IR (Infineon Technologies) |
MOSFET N-CH 40V 195A TO262 |
|
IXTR90P10PWickmann / Littelfuse |
MOSFET P-CH 100V 57A ISOPLUS247 |
|
NTD2955PT4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 12A DPAK |
|
AO4714Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 20A 8SOIC |
|
IRFR5505TRRIR (Infineon Technologies) |
MOSFET P-CH 55V 18A DPAK |
|
IRLZ24STRLVishay / Siliconix |
MOSFET N-CH 60V 17A D2PAK |
|
SSM3K17SU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 50V 100MA USM |
