English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 800mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V, 10V |
| rds on (max) @ id, vgs: | 1.5Ohm @ 1.5A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 100 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-223 |
| 包/箱: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFI4510GPBFIR (Infineon Technologies) |
MOSFET N CH 100V 35A TO220 |
|
IRFR9014TRRVishay / Siliconix |
MOSFET P-CH 60V 5.1A DPAK |
|
SI7802DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 250V 1.24A PPAK |
|
IPB77N06S212ATMA1IR (Infineon Technologies) |
MOSFET N-CH 55V 77A TO263-3 |
|
NTF3055L175T1Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 2A SOT223 |
|
STS17NF3LLSTMicroelectronics |
MOSFET N-CH 30V 17A 8SO |
|
IRF7202TRIR (Infineon Technologies) |
MOSFET P-CH 20V 2.5A 8SO |
|
IRF610LVishay / Siliconix |
MOSFET N-CH 200V 3.3A TO262 |
|
IRL5602STRRPBFIR (Infineon Technologies) |
MOSFET P-CH 20V 24A D2PAK |
|
AOTF2918LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 13A/58A TO220F |
|
NVD6820NLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 90V 10A/50A DPAK |
|
TPC8126,LQ(CMToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 11A 8SOP |
|
SPB08P06PIR (Infineon Technologies) |
MOSFET P-CH 60V 8.8A TO263-3 |
