English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 54A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 14mOhm @ 26A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 17 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1060 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.8W (Ta), 71W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PHU11NQ10T,127NXP Semiconductors |
MOSFET N-CH 100V 10.9A IPAK |
|
IRF7457TRIR (Infineon Technologies) |
MOSFET N-CH 20V 15A 8SO |
|
IRF4905STRRIR (Infineon Technologies) |
MOSFET P-CH 55V 74A D2PAK |
|
IRF3710ZGPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 59A TO220AB |
|
IPI075N15N3GHKSA1IR (Infineon Technologies) |
MOSFET N-CH 150V 100A TO262-3 |
|
STB14NK50Z-1STMicroelectronics |
MOSFET N-CH 500V 14A I2PAK |
|
SI1402DH-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 2.7A SC70-6 |
|
TPC8111(TE12L,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 11A 8SOP |
|
IRFZ48VSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 72A D2PAK |
|
FDZ291PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 4.6A 9BGA |
|
IRF5804TRIR (Infineon Technologies) |
MOSFET P-CH 40V 2.5A MICRO6 |
|
IRFU3410IR (Infineon Technologies) |
MOSFET N-CH 100V 31A IPAK |
|
STW20NM65NSTMicroelectronics |
MOSFET N-CH 650V 19A TO247-3 |
